Modeling of altered layer formation during reactive ion etching of GaAs

Formation of Nanowrinkles on Varied Polymers Using Reactive Ion Etching

The optical and mechanical properties of many materials can be altered by forming nanoscale structures on their surfaces, such as wrinkles, without altering the bulk properties of the materials. Such nanowrinkled materials have important applications in many fields, including the production of photodetectors and solar cells. Wrinkles are formed when compressive strain is applied to a stiff skin...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Modeling of Reactive Ion Etching for Si/Si02 Systems

Molecular dynamics (MD) simulations have been used to study surface reaction dynamics of Si and Si02 etching by halogens. To perform classical MD simulations for Si02 etching reaction by halogens (C1 or F), we have constructed new sets of twoand three-body interatomic potential functions based on potential energy data obtained from ab initio quantum mechanical calculations of the electronic sta...

Deep Reactive Ion Etching (DRIE)

Study of Reactive Ion Etching Process to Fabricate Reliable Via-Hole Ground Connections in GaAs MMICs

In this study we have investigated the effect of starting GaAs semi-insulating substrate surface (polished / unpolished), type of mask used (photoresist / Nickel) and RIE parameters (pressure and power) on the surface smoothness/morphology of the etched via-walls and resultant etch profiles with CCl2F2 / CCl4 gas chemistry. The ultimate aim of the study has been to develop a reliable via-hole g...